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    Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers
     
    Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers
    • Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers
    • Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers
    • Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers
    • Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers
    • Buy cheap High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks from wholesalers

    High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

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    Brand Name : Sintec Optronics
    Certification :
    Delivery Time : 5-7days
    Payment Terms : T/T via bank
    Model Number : STCX Series
    Price :
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    High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

    High-power Diode Single Emitter Laser Chips / Bars / Arrays / Stacks

    (1) High-power Single Emitter Laser Chips – BC Series

    Optical
    Center Wavelength nm 915 915 976 976
    Wavelength Tolerance nm ±10 ±10 ±3 ±3
    Output Power W 25 30 25 30
    Operating Mode # CW CW CW CW
    Fast-axis Divergence Deg 55 55 55 55
    Slow-axis Divergence Deg 9.5 9.5 9.5 9.5
    Spectral Width (FWHM) nm 4 4 4 4
    Wavelength Temp Coefficient nm/℃ 0.3 0.3 0.33 0.33
    TE Polarization % 97 97 97 97
    Electrical
    Emitter Width μm 195 230 195 230
    Cavity Length mm 4.5 4.5 4.5 4.5
    Width μm 400 400 400 400
    Thickness μm 145 145 145 145
    Geometric
    Electro-optic Conversion Eff. % 62 62 63 63
    Slope Efficiency W/A 1.15 1.15 1.1 1.1
    Thershold Current A 1.5 1.8 1.1 1.5
    Operating Current A 25 30 25 30
    Operating Voltage V 1.65 1.65 1.55 1.55

    (2) High-power Diode Bar – BB Series

    Optical
    Center Wavelength nm 808 808 808 808 940 940
    Wavelength Tolerance nm ±10 ±10 ±10 ±3 ±3 ±3
    Output Power W 50 60 100 ≥500 200 ≥700
    Fast-axis Divergence Deg ≤65 ≤65 ≤65 ≤65 ≤55 ≤55
    Slow-axis Divergence Deg ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5
    Spectral Width (FWHM) nm ≤2.5 ≤2.5 ≤3 ≤3.5 ≤3 5
    TE Polarization TM/TE TE TE TE TE TE TE
    Wavelength Temp Coefficient nm/℃ 0.28 0.28 0.28 0.28 0.3 0.3
    Electrical
    Electro-optic Conversion Eff % ≥55 ≥55 ≥55 ≥58 ≥63 ≥63
    Slope Efficiency W/A 1.25 1.25 1.25 1.25 1 1.15
    Threshold Current A 8 12 15 25 25 25
    Operating Current A 50 60 105 ≤430 220 650
    Operating Voltage V 1.8 1.8 1.8 2.0 1.55 1.7
    Pulse Width us - - - 200 - 500
    Pulse frequency Hz - - - 400 - 160
    Pulse duty cycle % - - - 8 - 8
    Geometric
    Number of Emitters # 19 49 49 34 24 34
    Emitter Width μm 150 100 100 232 200 232
    Emitter Pitch μm 500 200 200 290 400 290
    Fill Factor % 30 50 50 80 50 80
    Cavity Length mm 1.0 1.0 1.5 1.5 3 2
    Bar Thickness μm 145 145 145 115 115 115
    Bar Length mm 10 10 10 10.25 10.25 10.25
    Thermal
    Operating Temperature ℃ 25 25 25 25 20 25
    Storage Temperature ℃ 40~80 -40~80 40~80 40~80 -40~80 40~80
    Flow Velocity L/min / 0.25 0.25 0.20 0.25 0.25

    (3) High-power Diode VCSEL Chips – TOF series

    Optical
    Center Wavelength@Iop nm 808 850 940 940
    Spectral width (half width) nm 2 2 2 2
    Wavelength shift / temperature nm/℃ 0.07 0.07 0.07 0.07
    Emitter aperture μm 10 10 10 10
    Emitter minimum pitch μm 44 47 33 40
    Emitter number / 621 1216 305 364
    Output Power W 3.1 4 2.1 3.1
    Operating current A 3.5 5 2.8 3.5
    Power consumption W 7 10 5.6 7
    Operating Voltage V 2 2 2 2
    Operating efficiency % 35 40 40 40
    Threshold current A 0.7 1.2 0.38 0.47
    Divergence angle ° 22 22 20 20
    Geometric
    Emitter length μm 916 1535 525 916
    Emitter width μm 901 1560 615 610
    Chip length μm 1206 1845 695 996
    Chip width μm 1006 1670 795 890
    Chip thickness μm 100 100 100 100

    (4) High-power Diode VCSEL Chips – SL Series

    Optical
    Center Wavelength@Iop nm 934 940 946
    Spectral width (half width) nm 2
    Wavelength shift / temperature nm/℃ 0.07
    Emitter aperture μm 8
    Emitter minimum pitch μm 21
    Emitter number(Area A) - 377
    Emitter number(Area B) - 6
    Output Power(Area A) W 1.3 1.5 1.7
    Output Power(Area B) W 0.024
    Single point power W 0.004
    Operating current(Area A) A 3.6
    Operating current(Area B) A 0.06
    Power consumption(Area A) W 3.6
    Power consumption(Area B) W 0.06
    Operating Voltage V 2
    Operating efficiency % 40 45
    Threshold current(Area A) A 0.38
    Threshold current(Area B) A 0.006
    Divergence angle ° 20
    Geometric
    Luminous zone length μm 523
    Light-emitting area width μm 548
    Chip length μm 758 778 798
    Chip width μm 701 721 741
    Chip thickness μm 90 100 110

    (5) High-power Diode VCSEL Chips – LI Series

    Optical
    Center Wavelength nm 905 940
    Spectral width (half width) nm 2 2
    Wavelength shift / temperature nm/℃ 0.07 0.07
    Emitter aperture μm 12 12
    Emitter minimum pitch μm 22 22
    Emitter number / 136 136
    Output Power W 60 60
    Operating current A 15 15
    Power consumption W 300 300
    Operating Voltage V 25 25
    Operating efficiency % 20 20
    Threshold current A 0.2 0.2
    Divergence angle ° 20 20
    Geometric
    Emitter length μm 273 273
    Emitter width μm 288 288
    Chip length μm 520 520
    Chip width μm 401 401
    Chip thickness μm 100 100

    (6) High-power Diode Laser Device – COS Series

    Optical
    Center Wavelength nm 915 915 976 976
    Wavelength Tolerance nm ±10 ±10 ±3 ±3
    Output Power W 25 30 25 30
    Operating Mode # CW CW CW CW
    Fast-axis Divergence Deg 55 55 55 55
    Slow-axis Divergence Deg 9.5 9.5 9.5 9.5
    Spectral Width (FWHM) nm 4 4 4 4
    Wavelength Temperature Coefficient nm/℃ 0.3 0.3 0.33 0.33
    TE Polarization % 97 97 97 97
    Electrical
    Electrio-optic Conversion Eff % 62 62 63 63
    Slope Efficiency W/A 1.15 1.15 1.1 1.1
    Thershold Current A 1.5 1.8 1.1 1.5
    Operating Current A 25 30 25 30
    Operating Voltage V 1.65 1.65 1.55 1.55
    Geometric
    Emitter Width μm 195 230 195 230
    Cavity Length mm 4.5 4.5 4.5 4.5
    Width μm 400 400 400 400
    Thickness μm 145 145 145 145

    (7) High-power Diode Laser Devices – MCC Series

    Optical
    Center Wavelength nm 808 808 808 808 940 940
    Wavelength Tolerance nm ±10 ±10 ±10 ±10 ±3 ±3
    Output Power W 50 60 100 ≥500 200 200
    Fast-axis Divergence Deg ≤65 ≤65 ≤65 ≤65 ≤55 ≤55
    Slow-axis Divergence Deg ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5
    Spectral Width (FWHM) nm ≤2.5 ≤2.5 ≤3 ≤3.5 ≤3 ≤3
    Polarization Mode TM/TE TE TE
    Wavelength Temperature Coefficient nm/℃ 0.28 0.28 0.28 0.28 0.3 0.3
    Electrical
    Electrio-optic Conversion Eff % ≥55 ≥55 ≥55 ≥58 ≥63 ≥63
    Slope Efficiency W/A 1.25 1.25 1.25 1.25 1 1.15
    Thershold Current A 8 12 15 25 25 25
    Operating Current A 50 60 105 ≤430 220 650
    Operating Voltage V 1.8 1.8 1.8 2.0 1.55 1.7
    Pulse Width us - - - 200 - 500
    Pulse frequency Hz - - - 400 - 160
    Pulse Duty Cycle % - - - 8 - 8
    Geometric
    Number of Emitters # 19 49 49 34 24 34
    Emitter Width μm 150 100 100 232 200 232
    Emitter Pitch μm 500 200 200 290 400 290
    Fill Factor % 30 50 50 80 50 80
    Cavity Length mm 1.0 1.0 1.5 1.5 3 2
    Bar Thickness μm 145 145 145 115 115 115
    Bar Length mm 10 10 10 10.25 10.25 10.25
    Thermal
    Operating Temp. ℃ 25 25 25 25 20 25
    Storage temp. ℃ -40~80 -40~80 -40~80 -40~80 -40~80 -40~80
    Water Flow Rate L/min / 0.25 0.25 0.20 0.25 0.25

    (8) High-power Diode Laser Stacks – MCP Series

    Optical
    Center Wavelength nm 808 808 808
    Wavelength Tolerance nm ±10 ±10 ±3
    Output Power W 60 100 300
    Number of Bars # 2 ～ 60 2 ～ 60 2 ～ 60
    Spectral Width (FWHM) nm ≤8 ≤8 4
    Operating Mode # CW CW QCW
    Fast-axis Divergence Deg ≤42 ≤42 40
    Slow-axis Divergence Deg ≤10 ≤10 10
    Wavelength Temp Coefficient nm/℃ 0.28 0.28 0.28
    Electrical
    Power Conversion Efficiency % 50 50 50
    Slope Efficiency/Bar W/A ≥1.1 ≥1.1 1.1
    Threshold Current A 4.5 4.5 4.5
    Operating Current A 0.16 0.16 290
    Operating Voltage/Bar V ≤2 ≤2 1.8
    Thermal
    Operating Temperature ℃ 15 ～ 35 15 ～ 35 25
    Storage Temperature ℃ 0~55 0~55 0~55
    Bar/Water Velocity/Bar l/m 0.3~0.5 0.3~0.5 0.3
    Entrace Maximum Pressure psi 55 55 55
    Water Type - DI Water DI Water DI Water
    Deionized Water Resistivity(DI) kΩ·cm 200~500 200~500 200~500
    Pure Water Filter Particles μm ＜20 ＜20 ＜20

    (9) High-power Diode Laser Stacks – QCP Series

    Optical
    Center Wavelength nm 808 808
    Wavelength Tolerance W ±3 ±10
    Bar Output Power/Bar % 300 40
    Number of Bars % 2 ～ 24 60
    Total Output Power μm - 2400
    Bar-to-Bar Spacing - 0.4 ～ 1.8 0.9
    Spectral Width (FWHM) - 4 8
    Pulse Width m 50-500 10-100
    Repetition Rate 1-200 1-10
    Fast-axis Divergence(FWHM) nm 40 40
    Slow-axis Divergence(FWHM) mW 10 10
    Wavelength Temp Coefficient 0.28 0.28
    Electrical
    Electro-optic Conversion Eff % 50 50
    Slope Efficiency/Bar W/A 1.1 1.1
    Threshold Current A 20 10
    Operating Current A 300 50
    Operating Voltage/Bar V 2 1.8
    Thermal
    Water Type - Pure Water Pure Water
    Operating Temperature ℃ 25 25
    Storage Temperature ℃ -40-85 -40-85

    (10) High-power Diode Laser Devices – TO Series

    Optical
    Min Typical Max
    Center Wavelength nm 820 830 840
    Wavelength Tolerance nm ±10
    Output Power W 1.0
    Spectral Width(FWHM) nm 3.0 4.0
    Wavelength Temp Coefficient nm/℃ 0.3
    Electrical
    Electro-optic Conversion Eff % 36 42
    Slope Efficiency W/A 1.05 1.1
    Threshold Current A 0.38 0.45
    Operating Current A 1.28 1.40
    Operating Voltage V 1.8 2.2
    Thermal
    Operating Temperature ℃ 0 25 40
    Storage Temperature ℃ -20~70

    SBN Series Diode aser Chips/Bars/Stacks

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    High Power Single Emitter Laser Diode

      

    Single Emitter Laser Diode

      

    Laser Diode

      
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